Post-doctoral position in Georgia Tech, US

Post-doctoral position in in situ and high-resolution STEM characterization of ferroelectric materials

The Khan Lab and the Kacher Lab jointly are currently looking for a dynamic researcher to aid in the efforts to understand the phase state and switching behavior in novel ferroelectric and anti-ferroelectric materials, nano-structures and nano-devices. Currently, we are accepting applications for a post-doctoral position focused on applying in situ biasing and high-resolution STEM imaging techniques to understand the factors that dictate ferroelectric and anti-ferroelectric behavior. The work will involve in situ S/TEM biasing experiments using probe and chip-based biasing holders in an aberration corrected STEM. The position is available beginning in May 2021 and will continue for one year from hire date, with yearly extensions to a second and third year possible depending on performance and funding.

Required Qualifications:

• A Ph.D. in Materials Science and Engineering, Mechanical Engineering, Electrical Engineering, Physics, or a related discipline.
• Excellence in written and oral communication as evident by a strong publication and presentation track record.
• Expertise in electron microscopy-based characterization

Desired Qualifications:

Strong candidates will have experience in at least some of the following areas:

• High resolution STEM imaging
• FIB-based sample preparation

Interested candidates should send a cover letter, CV including a list of publications and presentations, three potential references with phone numbers and emails included to Prof. Asif Khan (asif.khan@ece.gatech.edu) and Prof. Josh Kacher (josh.kacher@mse.gatech.edu). Reviews of applications will begin immediately and will continue until the position is filled.