Subject: Characterization and Modeling of Dopant Diffusion Under Process-Induced Stress.

Description: 

The aim of the PhD is to reliably predict the impact of manufacturing process-induced stress on junction profile modification and subsequent electrical parameters shifts on sub-micrometric electronic active devices. The job will involve physical and electrical characterization of dedicated, previously designed simple test structures with a view to assessing the nature and magnitude of mechanical stress and dopant diffusion. A critical review and improvement (if necessary) of state-of-the-art stress-dependent dopant diffusion models will pave the way to an accurate Technology Computer Aided Design (TCAD) simulation of realistic (that is, manufactured) electronic devices.

It will be performed in strong partnership with STMicroelectronics.

Candidate profile:

The ideal candidate has a Master Degree in Material Sciences (or equivalent), a solid background in semiconductor physics, good communication skills and is proficient in written and spoken English.

PhD Advisor: Pr. Olivier Thomas; Email: olivier.thomas@im2np.fr; Laboratory: IM2NP (http://www.im2np.fr/); Industry: STMicroelectronics, Rousset–France (http://www.st.com); Funding: CIFRE (3 years); Location: Marseille (France), Rousset (France)

Applications should be sent by email to Prof. Olivier THOMAS (olivier.thomas@im2np.fr) and/or Dr. Roberto SIMOLA (roberto.simola@st.com)

Deadline: June 1st,2018; Starting year: 2018

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