• Subject:

    3D integration involves vertically stacking of several integrated circuits and establishing electrical connections between them. Although 3D interconnect technologies have obvious advantages and their manufacturing process has almost reached the status of mass production, there are several reliability issues, as is often the case in emerging technologies. Electromigration is one of those concerns.


    • PhD degree in Computer Science, Engineering, Mathematics, or Physics; basics of microelectronic technologies with emphasis on 3D interconnect schemes will be a plus.
    • Good knowledge and interest in multiphysics (material science, mechanics, heat science), modeling (FEM [COMSOL especially], phase field method) is an asset.


    This internship will take place in the characterization and reliability lab. in conjunction with the simulation and modelling one in a technological and scientific research environment.

    For further information or for application, please contact Stéphane MOREAU (stephane-nico.moreau@cea.fr) and Olga CUETO (olga.cueto@cea.fr).

    More information on the subject and work description are available in the documents below :(French (Fr) and English (Gb) version)

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  • Subject: In situ synchrotron X-ray monitoring of the growth of defect-free two-dimensional materials by liquid-metal catalytic routes.

    Function: The successful candidate will participate in a team of postdocs and PhD fellows who will develop and investigate the growth of 2D materials on liquid metals surfaces using an especially developed growth reactor which will be placed at the ESRF, Grenoble. The growth by chemical vapor deposition at high pressure and temperatures will be characterized in situ, by means of two main techniques: Raman and X-ray scattering (Grazing Incidence X-Ray Scattering and Reflectivity). It will be complemented by theoretical calculations performed in Munich. More specifically, the successful candidate will be in charge; together with a PhD student, of the in situ synchrotron X-ray scattering measurements, which will make use of the ESRF ID10 liquid scattering beamline  and diffractometer as well as of the P08 beamline of PETRA-III and the LISA diffractometer, in Desy.  She/he will be under the supervision of Gilles Renaud from CEA/INAC and of Oleg Konovalov, the ESRF scientist in charge of the ID10 beamline.

    Application: This is a full time, 3 year fixed term contract, located at Grenoble, ESRF with several experiments in Hamburg (Desy-Petra-III). Interested applicants should submit:

    • 1 page cover letter stating the motivation, research experience and goals, and anticipated available
    • curriculum vitae, and
    • contact information for 3 references (reference letters are not required at this time)

    to Gilles Renaud: CEA-Grenoble INAC/MEM/NRS and Univ. Grenoble Alpes, 17 rue des Martyrs, 38054 Grenoble Cedex, France. email: gilles.renaud@cea.fr. 

    Application deadline:  October 30, 2017

    More information are available in the following document: «PostDoc_LMCat_GRenaud.pdf »

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  • The "Surfaces, Interfaces and Nano-Objets'' group (SINanO) of the CEMES laboratory, located in Toulouse (France), is looking for a candidate for a 12 months postdoctoral position, which is funded by the ''MAGIC'' project of the Labex NEXT ( http ://www.next-toulouse.fr/).

    Subject: Unravelling the atomistic mechanisms of Ag+ release through a silica matrix for controlled anti-bacterial properties.

    The successful candidate will use DFT-based ab initio molecular dynamics simulations to model the interfaces between amorphous silica and silver nanoparticles (AgNP). And will be welcomed into the CEMES SINanO team (Toulouse) and supervised by Magali Benoit (DR2) and Nathalie Tarrat (CR1) and will have regular interactions with the experimentalists of the group NeO.

    The position is available from January 2018 but the start date of the position is flexible.

    Qualifications: The candidate must have a Ph.D. and a solid experience in solid state physics and the first-principles theory of the electronic structure. Practical experience with high-performance computing is important.

    Application: Please send your application by October 15, 2017. Applications must be submitted as a PDF file containing all documents to be considered. To apply, send the following documents to Magali Benoit: mbenoit@cemes.fr
    - Cover letter
    - CV
    - Degree (Master / PhD)
    - List of publications

    More information are available in the document below: (First page in French, and English below)

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  • The Laboratoire d’Étude des Microstructures et de Mécanique des Matériaux (LEM3) in France and The Centre Interdisciplinaire de Microscopie Électronique (CIME) in Switzerland are looking for a 12 month Postdoc for Characterization and 3D reconstruction of deformation defects in TiAl based alloys observed by Scanning Electron Microscopy (SEM), to support their research.

    Your tasks:

    - You will perform detailed analyses of deformation microstructures.

    - You will mainly work with SEM. You will develop and explore cutting-edge techniques for characterizing defects.

    - You will interact with computer scientists, engineers and researchers from several countries.

    - You will share your time between Metz (France) and Lausanne (Switzerland).

    - Your results will be discussed in the framework of materials plasticity particularly on TiAl based alloys.

    Your profile:

    - You should be a PhD in materials science. (PhD defense in 2014, 2015, 2016 or 2017)

    - You should have good knowledge of deformation physics and plasticity of materials.

    - Experience with electron microscopes is expected.

    - As you will be part of international teams, good communication skills in English and teamwork practices are expected.

    For further information and application, please contact:

    Dr. Antoine GUITTON
    +33 372 747 787

    More information are available on the document below :


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  • Subject: Characterization and Modeling of Dopant Diffusion Under Process-Induced Stress.

    The aim of the PhD is to reliably predict the impact of manufacturing process-induced stress on junction profile modification subsequent electrical parameters shifts on sub-micrometric electronic active devices. The job will involve physical and electrical characterization of dedicated, previously designed simple test structures with a view to assessing the nature and magnitude of mechanical stress and dopant diffusion. A critical review and improvement (if necessary) of state-of-the-art stress-dependent dopant diffusion models will pave the way to an accurate Technology Computer Aided Design (TCAD) simulation of realistic (that is, manufactured) electronic devices.

    It will be performed in strong partnership with STMicroelectronics. 

    Candidate profile:   
    The ideal candidate has a Master Degree in Material Sciences (or equivalent), a solid background in semiconductor physics, good communication skills and is proficient in written and spoken English.

    Deadline : September 2017   
    Starting year : 2017   
    PhD Advisor : Pr. Olivier Thomas, Email : olivier.thomas@im2np.fr   
    Laboratory : IM2NP (http://www.im2np.fr/)   
    Industry : STMicroelectronics, Rousset–France (http://www.st.com)   
    Funding : CIFRE  (3 years)   
    Location : Marseille (France), Rousset (France)

    Applications should be sent by email to Prof. Olivier THOMAS (olivier.thomas@im2np.fr) and/or Dr. Roberto SIMOLA (roberto.simola@st.com).

    More information on the subject can be found in the document below:



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